標題: A comparison of quantum correction models for nanoscale MOS structures under inversion conditions
作者: Li, Y
友訊交大聯合研發中心
D Link NCTU Joint Res Ctr
關鍵字: quantum mechanical effects;quantum correction model;MOS structure;nanodevice;electron density;numerical method;computer simulation
公開日期: 2005
摘要: Quantum correction model features the correction of the inversion layer charge on different classical transport models in semiconductor device simulation. This approach has successfully been of great interest in the recent years. Considering a metal-oxide-semiconductor (MOS) structure in this paper, the Hansch, the modified local density approximation (MLDA), the density-gradient (DG), the effective potential (EP), and our models are investigated computationally and compared systematically with the result of the Schrodinger-Poisson (SP) model. In terms of the accuracy for (1) the position of the charge concentration peak, (2) the maximum of the charge concentration, (3) the total inversion charge sheet density, and (4) the average inversion charge depth, these well-established models are examined simultaneously. The DG model requires the solution of a boundary value problem, the EP model overestimates the position of the charge concentration peak and the maximum of the charge concentration, our explicit model demonstrates good accuracy among models.
URI: http://hdl.handle.net/11536/25486
ISBN: 0-87849-962-8
ISSN: 0255-5476
期刊: CROSS-DISCIPLINARY APPLIED RESEARCH IN MATERIALS SCIENCE AND TECHNOLOGY
Volume: 480
起始頁: 603
結束頁: 610
顯示於類別:會議論文