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dc.contributor.authorLin, Albert S.en_US
dc.contributor.authorFu, Sze-Mingen_US
dc.contributor.authorZhong, Yan-Kaien_US
dc.date.accessioned2014-12-08T15:28:24Z-
dc.date.available2014-12-08T15:28:24Z-
dc.date.issued2012en_US
dc.identifier.isbn978-1-4673-0066-7en_US
dc.identifier.urihttp://hdl.handle.net/11536/20549-
dc.description.abstractThe modeling of intermediate band solar cell has been developed since 90's and continued effort is made to facilitate the realization of this novel device. Two formulation has been used to model the generation recombination rate of IBSC including conventionally available modified-Shockley-Reed-Hall formulation or later proposed IBSC formulation (Luque and Marti, PRL 78 5014). This paper proves that these two formulations are actually mathematically equivalent and actually one can be derived from the other. A unified mathematical framework can thus be established and the conventional drift-diffusion model can thus be employed for modeling novel IBSC with the inclusion of new model for intermediate band carrier transport. The debate whether the addition of impurity atoms would decrease the efficiency by shorter recombination lifetime or increase the efficiency by more absorption is studied, and results confirm that the efficient removal of photo-generated carriers from valence and conduction bands and solar concentration is the key to the success of subbandgap photovoltaics.en_US
dc.language.isoen_USen_US
dc.subjectintermediate band solar cellen_US
dc.subjectimpurity photovoltaic effecten_US
dc.subjectShockley-Reed-Hallen_US
dc.subjectdrift-diffusion modelen_US
dc.titleA Unified Mathematical Framework for Intermediate Band Solar Cellsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000309917800018-
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