完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lin, Albert S. | en_US |
dc.contributor.author | Fu, Sze-Ming | en_US |
dc.contributor.author | Zhong, Yan-Kai | en_US |
dc.date.accessioned | 2014-12-08T15:28:24Z | - |
dc.date.available | 2014-12-08T15:28:24Z | - |
dc.date.issued | 2012 | en_US |
dc.identifier.isbn | 978-1-4673-0066-7 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/20549 | - |
dc.description.abstract | The modeling of intermediate band solar cell has been developed since 90's and continued effort is made to facilitate the realization of this novel device. Two formulation has been used to model the generation recombination rate of IBSC including conventionally available modified-Shockley-Reed-Hall formulation or later proposed IBSC formulation (Luque and Marti, PRL 78 5014). This paper proves that these two formulations are actually mathematically equivalent and actually one can be derived from the other. A unified mathematical framework can thus be established and the conventional drift-diffusion model can thus be employed for modeling novel IBSC with the inclusion of new model for intermediate band carrier transport. The debate whether the addition of impurity atoms would decrease the efficiency by shorter recombination lifetime or increase the efficiency by more absorption is studied, and results confirm that the efficient removal of photo-generated carriers from valence and conduction bands and solar concentration is the key to the success of subbandgap photovoltaics. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | intermediate band solar cell | en_US |
dc.subject | impurity photovoltaic effect | en_US |
dc.subject | Shockley-Reed-Hall | en_US |
dc.subject | drift-diffusion model | en_US |
dc.title | A Unified Mathematical Framework for Intermediate Band Solar Cells | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000309917800018 | - |
顯示於類別: | 會議論文 |