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dc.contributor.authorLi, Chun-Hsingen_US
dc.contributor.authorKuo, Chien-Nanen_US
dc.contributor.authorKuo, Ming-Chingen_US
dc.date.accessioned2014-12-08T15:28:31Z-
dc.date.available2014-12-08T15:28:31Z-
dc.date.issued2012-11-01en_US
dc.identifier.issn0018-9480en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TMTT.2012.2216285en_US
dc.identifier.urihttp://hdl.handle.net/11536/20632-
dc.description.abstractThis paper presents a low-power wideband receiver front-end design using a resonator coupling technique. Inductively coupled resonators, composed of an on-chip transformer and parasitic capacitances from a low-noise amplifier, a mixer, and the transformer itself, not only provide wideband signal transfer, but also realize wideband high-to-low impedance transformation. The coupled resonators also function as a wideband balun to give single-to-differential conversion. Analytic expressions for the coupled resonators with asymmetric loads are presented for design guidelines. The proposed receiver front-end only needs a few passive components so that gain degradation caused by the passive loss is minimized. Hence, power consumption and chip area can be greatly reduced. The chip is implemented in 0.18-mu m CMOS technology. The experimental result shows that the -3-dB bandwidth can span from 20 to 30 GHz with a peak conversion gain of 18.7 dB. The measured input return loss and third-order intercept point are better than 16.7 dB and -7.6 dBm, respectively, over the bandwidth. The minimum noise figure is 7.1 dB. The power consumption is only 5.2 mW from a 1.2-V supply. The chip area is only 0.18 mm(2).en_US
dc.language.isoen_USen_US
dc.subjectCMOSen_US
dc.subjectcommon-gate (CG) low-noise amplifier (LNA)en_US
dc.subjectinductively coupled resonators (ICRs)en_US
dc.subjectlow poweren_US
dc.subjectlow voltageen_US
dc.subjectmixeren_US
dc.subjectresonator coupling network (RCN)en_US
dc.subjectwidebanden_US
dc.titleA 1.2-V 5.2-mW 20-30-GHz Wideband Receiver Front-End in 0.18-mu m CMOSen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TMTT.2012.2216285en_US
dc.identifier.journalIEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUESen_US
dc.citation.volume60en_US
dc.citation.issue11en_US
dc.citation.spage3502en_US
dc.citation.epage3512en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000310969100019-
dc.citation.woscount2-
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