標題: | UV ozone treatment for improving contact resistance on graphene |
作者: | Chen, Chung Wei Ren, Fan Chi, Gou-Chung Hung, Sheng-Chun Huang, Y. P. Kim, Jihyun Kravchenko, Ivan I. Pearton, Stephen J. 光電工程學系 Department of Photonics |
公開日期: | 1-十一月-2012 |
摘要: | Optimized UV ozone cleaning of graphene layers on SiO2/Si substrates is shown to improve contact resistance of e-beam evaporated Ti/Au contacts by three orders of magnitude (3 x 10(-6) Omega-cm(2)) compared to untreated surfaces (4 x 10(-3) Omega-cm(2)). Subsequent annealing at 300 degrees C lowers the minimum value achieved to 7 x 10(-7) Omega-cm(2). Ozone exposure beyond an optimum time (6 min in these experiments) led to a sharp increase in sheet resistance of the graphene, producing degraded contact resistance. The UV ozone treatment is a simple and effective method for producing high quality contacts to graphene. (C) 2012 American Vacuum Society. [http://dx.doi.org/10.1116/1.4754566] |
URI: | http://dx.doi.org/10.1116/1.4754566 http://hdl.handle.net/11536/20637 |
ISSN: | 1071-1023 |
DOI: | 10.1116/1.4754566 |
期刊: | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B |
Volume: | 30 |
Issue: | 6 |
結束頁: | |
顯示於類別: | 期刊論文 |