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dc.contributor.authorLi, Yimingen_US
dc.contributor.authorCheng, Hui-Wenen_US
dc.date.accessioned2014-12-08T15:28:34Z-
dc.date.available2014-12-08T15:28:34Z-
dc.date.issued2012-11-01en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.sse.2012.05.017en_US
dc.identifier.urihttp://hdl.handle.net/11536/20673-
dc.description.abstractWe estimate the effects of random discrete dopants (RDs) and random interface traps (ITs) on physical and electrical characteristic fluctuations of 16-nm-gate high-kappa/metal gate (HKMG) metal-oxide-semiconductor field effect transistors (MOSFETs). Two-dimensional (2D) random ITs at the hafnium oxide (HfO2)/silicon interface and 3D RDs inside the silicon channel of the 16-nm-gate HKMG MOSFETs are simultaneously incorporated into an experimentally validated 3D device simulation to quantify the RDs-and-ITs-fluctuated characteristics. The random effect of the combined RDs and ITs induces rather different fluctuation in the threshold voltage, the on-/off-state current, and the gate capacitance in the 16-nm-gate HKMG MOSFETs. The surface potential, DC and AC characteristic fluctuations are affected to different extents by the random combinatorial RDs and ITs. Nonlinearly correlated RDs and ITs violate the statistical assumption of independent identical distributions between the RDs- and ITs-induced random variables. Consequently, for the studied 16-nm-gate HKMG N-MOSFETs, the threshold voltage fluctuation induced by the combined RDs and ITs is 11% less than their statistical sum due to local interaction of surface potentials resulting from the RDs and ITs simultaneously. Similarly, it is about 8.9% for the P-MOSFET devices. Depending upon random position and number of the combined RDs and ITs, overestimation or underestimation between the statistical sum of variances and the 3D device simulation is also observed for the drain current and the gate capacitance. (c) 2012 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectRandom discrete dopanten_US
dc.subjectRandom interface trapen_US
dc.subjectDC/AC fluctuationsen_US
dc.subjectRandom effecten_US
dc.subjectHigh-kappa/metal gateen_US
dc.subject16-nm-gateen_US
dc.subjectMOSFETsen_US
dc.subject3D device simulationen_US
dc.titleStatistical device simulation of physical and electrical characteristic fluctuations in 16-nm-gate high-kappa/metal gate MOSFETs in the presence of random discrete dopants and random interface trapsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.sse.2012.05.017en_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.citation.volume77en_US
dc.citation.issueen_US
dc.citation.spage12en_US
dc.citation.epage19en_US
dc.contributor.department資訊工程學系zh_TW
dc.contributor.departmentDepartment of Computer Scienceen_US
dc.identifier.wosnumberWOS:000309318900004-
dc.citation.woscount2-
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