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dc.contributor.authorHsu, Wei-Cheen_US
dc.contributor.authorChen, Chao-Chunen_US
dc.contributor.authorLin, Yong-Hanen_US
dc.contributor.authorLin, Huang-Kaien_US
dc.contributor.authorChiu, Hsin-Tienen_US
dc.contributor.authorLin, Juhn-Jongen_US
dc.date.accessioned2014-12-08T15:28:37Z-
dc.date.available2014-12-08T15:28:37Z-
dc.date.issued2012-09-05en_US
dc.identifier.issn1931-7573en_US
dc.identifier.urihttp://dx.doi.org/10.1186/1556-276X-7-500en_US
dc.identifier.urihttp://hdl.handle.net/11536/20692-
dc.description.abstractWe report on the first electrical characterizations of single-crystalline TiSi nanowires (NWs) synthesized by chemical vapor deposition reactions. By utilizing the focused-ion-beam-induced deposition technique, we have delicately made four-probe contacts onto individual NWs. The NW resistivities have been measured between 2 and 300 K, which reveal overall metallic conduction with small residual resistivity ratios in the NWs. Surprisingly, we find that the effect due to the interference processes between the elastic electron scattering and the electron-phonon scattering largely dominates over the usual Boltzmann transport even at room temperature. Such prominent electron-phonon-impurity interference effect is ascribed to the presence of large amounts of disorder and high Debye temperatures in TiSi NWs.en_US
dc.language.isoen_USen_US
dc.subjectChemical vapor deposition reactionen_US
dc.subjectTiSi nanowireen_US
dc.subjectSilicideen_US
dc.subjectElectron-phonon scatteringen_US
dc.subjectElectron-phonon-impurity interferenceen_US
dc.subjectFocused-ion-beam-induced depositionen_US
dc.titleMetallic conduction and large electron-phonon-impurity interference effect in single TiSi nanowiresen_US
dc.typeArticleen_US
dc.identifier.doi10.1186/1556-276X-7-500en_US
dc.identifier.journalNANOSCALE RESEARCH LETTERSen_US
dc.citation.volume7en_US
dc.citation.issueen_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department應用化學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000311786200001-
dc.citation.woscount1-
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