标题: | Metallic conduction and large electron-phonon-impurity interference effect in single TiSi nanowires |
作者: | Hsu, Wei-Che Chen, Chao-Chun Lin, Yong-Han Lin, Huang-Kai Chiu, Hsin-Tien Lin, Juhn-Jong 电子物理学系 应用化学系 物理研究所 Department of Electrophysics Department of Applied Chemistry Institute of Physics |
关键字: | Chemical vapor deposition reaction;TiSi nanowire;Silicide;Electron-phonon scattering;Electron-phonon-impurity interference;Focused-ion-beam-induced deposition |
公开日期: | 5-九月-2012 |
摘要: | We report on the first electrical characterizations of single-crystalline TiSi nanowires (NWs) synthesized by chemical vapor deposition reactions. By utilizing the focused-ion-beam-induced deposition technique, we have delicately made four-probe contacts onto individual NWs. The NW resistivities have been measured between 2 and 300 K, which reveal overall metallic conduction with small residual resistivity ratios in the NWs. Surprisingly, we find that the effect due to the interference processes between the elastic electron scattering and the electron-phonon scattering largely dominates over the usual Boltzmann transport even at room temperature. Such prominent electron-phonon-impurity interference effect is ascribed to the presence of large amounts of disorder and high Debye temperatures in TiSi NWs. |
URI: | http://dx.doi.org/10.1186/1556-276X-7-500 http://hdl.handle.net/11536/20692 |
ISSN: | 1931-7573 |
DOI: | 10.1186/1556-276X-7-500 |
期刊: | NANOSCALE RESEARCH LETTERS |
Volume: | 7 |
Issue: | |
结束页: | |
显示于类别: | Articles |
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