标题: Metallic conduction and large electron-phonon-impurity interference effect in single TiSi nanowires
作者: Hsu, Wei-Che
Chen, Chao-Chun
Lin, Yong-Han
Lin, Huang-Kai
Chiu, Hsin-Tien
Lin, Juhn-Jong
电子物理学系
应用化学系
物理研究所
Department of Electrophysics
Department of Applied Chemistry
Institute of Physics
关键字: Chemical vapor deposition reaction;TiSi nanowire;Silicide;Electron-phonon scattering;Electron-phonon-impurity interference;Focused-ion-beam-induced deposition
公开日期: 5-九月-2012
摘要: We report on the first electrical characterizations of single-crystalline TiSi nanowires (NWs) synthesized by chemical vapor deposition reactions. By utilizing the focused-ion-beam-induced deposition technique, we have delicately made four-probe contacts onto individual NWs. The NW resistivities have been measured between 2 and 300 K, which reveal overall metallic conduction with small residual resistivity ratios in the NWs. Surprisingly, we find that the effect due to the interference processes between the elastic electron scattering and the electron-phonon scattering largely dominates over the usual Boltzmann transport even at room temperature. Such prominent electron-phonon-impurity interference effect is ascribed to the presence of large amounts of disorder and high Debye temperatures in TiSi NWs.
URI: http://dx.doi.org/10.1186/1556-276X-7-500
http://hdl.handle.net/11536/20692
ISSN: 1931-7573
DOI: 10.1186/1556-276X-7-500
期刊: NANOSCALE RESEARCH LETTERS
Volume: 7
Issue: 
结束页: 
显示于类别:Articles


文件中的档案:

  1. 000311786200001.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.