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dc.contributor.authorChu, Li-Weien_US
dc.contributor.authorLin, Chun-Yuen_US
dc.contributor.authorTsai, Shiang-Yuen_US
dc.contributor.authorKer, Ming-Douen_US
dc.contributor.authorSong, Ming-Hsiangen_US
dc.contributor.authorJou, Chewn-Puen_US
dc.contributor.authorLu, Tse-Huaen_US
dc.contributor.authorTseng, Jen-Chouen_US
dc.contributor.authorTsai, Ming-Hsienen_US
dc.contributor.authorHsu, Tsun-Laien_US
dc.contributor.authorHung, Ping-Fangen_US
dc.contributor.authorChang, Tzu-Hengen_US
dc.contributor.authorWei, Yu-Linen_US
dc.date.accessioned2014-12-08T15:28:40Z-
dc.date.available2014-12-08T15:28:40Z-
dc.date.issued2012en_US
dc.identifier.isbn978-1-4673-1467-1en_US
dc.identifier.issn0739-5159en_US
dc.identifier.urihttp://hdl.handle.net/11536/20741-
dc.description.abstractAn ESD protection cell consisted of a diode, a silicon-controlled rectifier (SCR), a PMOS, and inductors was proposed for dual-band radio-frequency (RF) ESD protection. The proposed ESD protection cell was suitable for RF circuit designers for them to easily apply ESD protection in the dual-band RF circuits.en_US
dc.language.isoen_USen_US
dc.titleDesign of ESD Protection Cell for Dual-Band RF Applications in a 65-nm CMOS Processen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2012 34TH ELECTRICAL OVERSTRESS/ELECTROSTATIC DISCHARGE SYMPOSIUM (EOS/ESD)en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000312868600042-
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