A New Procedure to Extract Ultra-Low Specific Contact Resistivity

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Tseng, Hsuan-Tzu	en_US
dc.contributor.author	Tsui, Bing-Yue	en_US
dc.date.accessioned	2014-12-08T15:28:41Z	-
dc.date.available	2014-12-08T15:28:41Z	-
dc.date.issued	2012	en_US
dc.identifier.isbn	978-1-4673-1137-3	en_US
dc.identifier.uri	http://hdl.handle.net/11536/20753	-
dc.description.abstract	In this work, a new procedure to extract ultra-low specific contact resistivity down to 10(-9) Omega-cm(2) is proposed. Design guidelines of the test structure are analyzed with 3-D simulation. Compared to the typical Cross-bridge-Kelvin resistor structure, the proposed structure has much better accuracy at low resistivity regime, looser design rules, simpler fabrication process.	en_US
dc.language.iso	en_US	en_US
dc.title	A New Procedure to Extract Ultra-Low Specific Contact Resistivity	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2012 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE (IITC)	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000312547500022	-
顯示於類別：	會議論文