Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Liu, Sheng-Hsien | en_US |
dc.contributor.author | Yang, Wen-Luh | en_US |
dc.contributor.author | Wu, Chi-Chang | en_US |
dc.contributor.author | Chao, Tien-Sheng | en_US |
dc.contributor.author | Ye, Meng-Ru | en_US |
dc.contributor.author | Su, Yu-Yuan | en_US |
dc.contributor.author | Wang, Po-Yang | en_US |
dc.contributor.author | Tsai, Ming-Jui | en_US |
dc.date.accessioned | 2014-12-08T15:28:43Z | - |
dc.date.available | 2014-12-08T15:28:43Z | - |
dc.date.issued | 2013-01-01 | en_US |
dc.identifier.issn | 0741-3106 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/LED.2012.2224633 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/20787 | - |
dc.description.abstract | In this letter, high-performance polyimide (PI)-based resistive random access memory (ReRAM) is presented by utilizing a new DAXIN-PI thin film as a resistance layer. The switching between high-and low-resistance states is triggered by the formation and dissociation of the charge transfer complex. As compared with the electrochemical-metallization-based ReRAM and the valence-change-based ReRAM, this DAXIN-PI ReRAM shows excellent performance, including large Ron/Roff ratio, superior endurance, low operation voltage, fast switching speed, needless of a forming process, and acceptable retention characteristics. Among them, large Ron/Roff ratio (> 10(5)) and superior endurance (> 10(5) cycles) can be simultaneously achieved, and the detailed reliability test for PI-based ReRAMs has been analyzed for the first time. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Polyimide (PI) | en_US |
dc.subject | resistive random access memory (ReRAM) devices | en_US |
dc.subject | sol-gel | en_US |
dc.title | High-Performance Polyimide-Based ReRAM for Nonvolatile Memory Application | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/LED.2012.2224633 | en_US |
dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
dc.citation.volume | 34 | en_US |
dc.citation.issue | 1 | en_US |
dc.citation.spage | 123 | en_US |
dc.citation.epage | 125 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000312834200041 | - |
dc.citation.woscount | 2 | - |
Appears in Collections: | Articles |
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