Lateral Two-Dimensional p-i-n Diode in a Completely Undoped GaAs/AlGaAs Quantum Well

doi:10.7567/JJAP.52.014001

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Van-Truong Dai	en_US
dc.contributor.author	Lin, Sheng-Di	en_US
dc.contributor.author	Lin, Shih-Wei	en_US
dc.contributor.author	Wu, Jau-Yang	en_US
dc.contributor.author	Li, Liang-Chen	en_US
dc.contributor.author	Lee, Chien-Ping	en_US
dc.date.accessioned	2014-12-08T15:28:44Z	-
dc.date.available	2014-12-08T15:28:44Z	-
dc.date.issued	2013-01-01	en_US
dc.identifier.issn	0021-4922	en_US
dc.identifier.uri	http://dx.doi.org/10.7567/JJAP.52.014001	en_US
dc.identifier.uri	http://hdl.handle.net/11536/20795	-
dc.description.abstract	A lateral two-dimensional p-i-n junction in an entirely undoped GaAs/AlGaAs quantum well has been fabricated. The optical and electrical characteristics of the junction are reported. The threshold voltage of the junction and the electroluminescence spectrum of the quantum well confirm the formation of the lateral two-dimensional junction. (C) 2013 The Japan Society of Applied Physics	en_US
dc.language.iso	en_US	en_US
dc.title	Lateral Two-Dimensional p-i-n Diode in a Completely Undoped GaAs/AlGaAs Quantum Well	en_US
dc.type	Article	en_US
dc.identifier.doi	10.7567/JJAP.52.014001	en_US
dc.identifier.journal	JAPANESE JOURNAL OF APPLIED PHYSICS	en_US
dc.citation.volume	52	en_US
dc.citation.issue	1	en_US
dc.citation.epage		en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	奈米科技中心	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.contributor.department	Center for Nanoscience and Technology	en_US
dc.identifier.wosnumber	WOS:000312731500025	-
dc.citation.woscount	1	-
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