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dc.contributor.authorVan-Truong Daien_US
dc.contributor.authorLin, Sheng-Dien_US
dc.contributor.authorLin, Shih-Weien_US
dc.contributor.authorWu, Jau-Yangen_US
dc.contributor.authorLi, Liang-Chenen_US
dc.contributor.authorLee, Chien-Pingen_US
dc.date.accessioned2014-12-08T15:28:44Z-
dc.date.available2014-12-08T15:28:44Z-
dc.date.issued2013-01-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.7567/JJAP.52.014001en_US
dc.identifier.urihttp://hdl.handle.net/11536/20795-
dc.description.abstractA lateral two-dimensional p-i-n junction in an entirely undoped GaAs/AlGaAs quantum well has been fabricated. The optical and electrical characteristics of the junction are reported. The threshold voltage of the junction and the electroluminescence spectrum of the quantum well confirm the formation of the lateral two-dimensional junction. (C) 2013 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleLateral Two-Dimensional p-i-n Diode in a Completely Undoped GaAs/AlGaAs Quantum Wellen_US
dc.typeArticleen_US
dc.identifier.doi10.7567/JJAP.52.014001en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume52en_US
dc.citation.issue1en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department奈米科技中心zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentCenter for Nanoscience and Technologyen_US
dc.identifier.wosnumberWOS:000312731500025-
dc.citation.woscount1-
Appears in Collections:Articles


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