Low-noise single-photon avalanche diodes in 0.25 mu m high-voltage CMOS technology

Abstract

By using 0.25 mu m high-voltage CMOS technology, we have designed and fabricated a structure of single-photon detectors. The new single-photon avalanche diode (SPAD) has (to our knowledge) the lowest dark count rate per unit area at room temperature without any technology customization. Our design is promising for realizing low-cost and high-performance SPAD arrays for imaging applications. (C) 2012 Optical Society of America