On-Current Decrease After Erasing Operation in the Nonvolatile Memory Device With LDD Structure

標題:	On-Current Decrease After Erasing Operation in the Nonvolatile Memory Device With LDD Structure
作者:	Chang, Geng-Wei Chang, Ting-Chang Syu, Yong-En Tai, Ya-Hsiang Jian, Fu-Yen 電子工程學系及電子研究所光電工程學系 Department of Electronics Engineering and Institute of Electronics Department of Photonics
關鍵字:	Lightly doped drain (LDD);nonvolatile memory;on-current decrease;silicon-oxide-nitride-oxide-silicon thin-film transistor (SONOS TFT)
公開日期:	1-八月-2011
摘要:	The on-current decrease phenomenon is observed after erasing operation in the silicon-oxide-nitride-oxide-silicon thin-film transistors (TFTs) with lightly doped drain (LDD) structure. As nonvolatile memory, when the TFT is programmed again, the on-current decrease phenomenon can be recovered. The on-current decrease and recovery are explained by the energy band diagrams at different drain biases. The explanation implies that this phenomenon only appears in the device with LDD structure, but not in the device without LDD structure, which is experimentally verified.
URI:	http://dx.doi.org/10.1109/LED.2011.2158182 http://hdl.handle.net/11536/20849
ISSN:	0741-3106
DOI:	10.1109/LED.2011.2158182
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	32
Issue:	8
起始頁:	1038
結束頁:	1040
顯示於類別：	期刊論文

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