完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | TSANG, JS | en_US |
dc.contributor.author | LEE, CP | en_US |
dc.contributor.author | FAN, JC | en_US |
dc.contributor.author | LEE, SH | en_US |
dc.contributor.author | TSAI, KL | en_US |
dc.date.accessioned | 2014-12-08T15:03:33Z | - |
dc.date.available | 2014-12-08T15:03:33Z | - |
dc.date.issued | 1995-02-01 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.34.1089 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/2084 | - |
dc.description.abstract | Effects of thickness and position of the low-temperature-grown GaAs (LT-GaAs) layer on the compositional disordering of AlGaAs/GaAs superlattice have been studied. Samples with a top LT-GaAs layer or a bottom LT-GaAs layer have been studied with various annealing conditions. It was found that the LT-GaAs layer grown on top of the superlattice is more effective in causing disordering than the LT-GaAs layer grown at the bottom. The amount of disordering increases with the thickness of the LT-GaAs layer. A selective disordering process has been developed using a patterned LT-GaAs cap layer. This disordering technique is very simple and can be easily applied to device fabrication. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | LT-GAAS | en_US |
dc.subject | COMPOSITIONAL DISORDERING | en_US |
dc.subject | SUPERLATTICE | en_US |
dc.subject | PHOTOLUMINESCENCE | en_US |
dc.title | EFFECTS OF LOW-TEMPERATURE-GROWN GAAS LAYER ON COMPOSITIONAL DISORDERING OF ALGAAS/GAAS SUPERLATTICES | en_US |
dc.type | Article; Proceedings Paper | en_US |
dc.identifier.doi | 10.1143/JJAP.34.1089 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | en_US |
dc.citation.volume | 34 | en_US |
dc.citation.issue | 2B | en_US |
dc.citation.spage | 1089 | en_US |
dc.citation.epage | 1093 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:A1995RF65900084 | - |
顯示於類別: | 會議論文 |