標題: | The Floating-Gate Non-Volatile Semiconductor Memory-From Invention to the Digital Age |
作者: | Sze, S. M. 交大名義發表 National Chiao Tung University |
關鍵字: | Semiconductor Memory |
公開日期: | 1-十月-2012 |
摘要: | In the past 45 years (from 1967 to 2012), the non-volatile semiconductor memory (NVSM) has emerged from a floating-gate concept to the prime technology driver of the largest industry in the world-the electronics industry. In this paper, we briefly review the historical development of NVSM and project its future trends to the year 2020. In addition, we consider NVSM's wide-range of applications from the digital cellular phone to tablet computer to digital television. As the device dimension is scaled down to the deca-nanometer regime, we expect that many innovations will be made to meet the scaling challenges, and NVSM-inspired technology will continue to enrich and improve our lives for decades to come. |
URI: | http://dx.doi.org/10.1166/jnn.2012.6648 http://hdl.handle.net/11536/20890 |
ISSN: | 1533-4880 |
DOI: | 10.1166/jnn.2012.6648 |
期刊: | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY |
Volume: | 12 |
Issue: | 10 |
起始頁: | 7587 |
結束頁: | 7596 |
顯示於類別: | 期刊論文 |