標題: The Floating-Gate Non-Volatile Semiconductor Memory-From Invention to the Digital Age
作者: Sze, S. M.
交大名義發表
National Chiao Tung University
關鍵字: Semiconductor Memory
公開日期: 1-十月-2012
摘要: In the past 45 years (from 1967 to 2012), the non-volatile semiconductor memory (NVSM) has emerged from a floating-gate concept to the prime technology driver of the largest industry in the world-the electronics industry. In this paper, we briefly review the historical development of NVSM and project its future trends to the year 2020. In addition, we consider NVSM's wide-range of applications from the digital cellular phone to tablet computer to digital television. As the device dimension is scaled down to the deca-nanometer regime, we expect that many innovations will be made to meet the scaling challenges, and NVSM-inspired technology will continue to enrich and improve our lives for decades to come.
URI: http://dx.doi.org/10.1166/jnn.2012.6648
http://hdl.handle.net/11536/20890
ISSN: 1533-4880
DOI: 10.1166/jnn.2012.6648
期刊: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume: 12
Issue: 10
起始頁: 7587
結束頁: 7596
顯示於類別:期刊論文