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dc.contributor.authorLOONG, WAen_US
dc.contributor.authorSHY, SLen_US
dc.contributor.authorLIN, YCen_US
dc.date.accessioned2014-12-08T15:03:33Z-
dc.date.available2014-12-08T15:03:33Z-
dc.date.issued1995-02-01en_US
dc.identifier.issn0167-9317en_US
dc.identifier.urihttp://dx.doi.org/10.1016/0167-9317(94)00106-5en_US
dc.identifier.urihttp://hdl.handle.net/11536/2091-
dc.description.abstractA new method, namely, top critical dimension exposure-defocus tree (TCD E-D Tree), has been developed in this paper and used to analyze simulation results for quartz-etch attenuated phase-shifting mask (APSM). Simulation studies using Depict-3 (from TMA) on isolated and dense patterns indicate that numerical aperture (NA) 0.5 has greater depth of focus (DOF); NA 0.6 has larger exposure latitude (EL); best degree of coherence (sigma, sigma) value is between 0.6 approximately 0.7; best intensity transmittance (IT) range is 4 approximately 6%; the effect of mask bias on DOF and EL is rather small. The effect of sigma on space patterns including contact holes shows an inverse trend compared with lines. While conventional binary intensity mask (BIM) shows a 0.9 mum total DOF for dense line; APSM in our study (zero mask bias, 4% IT, 0.5 NA, 0.6 sigma) shows a 1.2 mum total DOF (30% improvement). The experimental results are highly in agreement with simulation. However, APSM shows only an insignificant improvement for EL in this study. Stepper with a NA of 0.5 and a sigma of 0.6 is very suitable for line, space and dense line/space pattern transfer using APSM in this study.en_US
dc.language.isoen_USen_US
dc.title0.35-MU-M PATTERN FABRICATION USING QUARTZ-ETCH ATTENUATE PHASE-SHIFTING MASK IN AN I-LINE STEPPER WITH A 0.50-NA AND A 0.60-SIGMAen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/0167-9317(94)00106-5en_US
dc.identifier.journalMICROELECTRONIC ENGINEERINGen_US
dc.citation.volume27en_US
dc.citation.issue1-4en_US
dc.citation.spage275en_US
dc.citation.epage278en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.identifier.wosnumberWOS:A1995QN56900063-
Appears in Collections:Conferences Paper


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