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dc.contributor.authorWu, Ming-Chien_US
dc.contributor.authorLin, Meng-Hanen_US
dc.contributor.authorYeh, Yu-Tingen_US
dc.contributor.authorLin, Chen-Hsien_US
dc.contributor.authorTseng, Tseung-Yuenen_US
dc.date.accessioned2014-12-08T15:29:05Z-
dc.date.available2014-12-08T15:29:05Z-
dc.date.issued2010en_US
dc.identifier.isbn978-1-60768-142-7en_US
dc.identifier.issn1938-5862en_US
dc.identifier.urihttp://hdl.handle.net/11536/20990-
dc.identifier.urihttp://dx.doi.org/10.1149/1.3372595en_US
dc.description.abstractIn this study, we investigated the resistive switching characteristics of the SrZrO3 (SZO)-based resistance random access memory (RRAM). After the sequential thin-films Pt/Ti/SZO/LaNiO3 deposition, the post annealing (PA) treatment under various conditions was carried out to form the interfacial layer (TiOx) between Ti and SZO. It can be proved that the Ti modulation layer act as an oxygen getter can modify the resistive switching property of RRAM. With the suitable thickness of Ti layer and the proper annealing temperature, the SZO-based RRAM device could have a lower operation voltage, a lower compliance current a long retention behavior, and stable resistance ratio over 10(4) s under 0.3 V reading voltage.en_US
dc.language.isoen_USen_US
dc.titleHighly Stable SrZrO3 Bipolar Resistive Switching Memory by Ti Modulation Layeren_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1149/1.3372595en_US
dc.identifier.journalDIELECTRICS FOR NANOSYSTEMS 4: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURINGen_US
dc.citation.volume28en_US
dc.citation.issue2en_US
dc.citation.spage411en_US
dc.citation.epage420en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000313250400036-
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