Enhancement Performance of GaN-based Light-emitting Diodes by Modified Patterned Sapphire Surface

doi:10.1149/1.3485608

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DC 欄位	值	語言
dc.contributor.author	Lin, B-W.	en_US
dc.contributor.author	Hsu, W-C.	en_US
dc.contributor.author	Wu, Y. S.	en_US
dc.date.accessioned	2014-12-08T15:29:06Z	-
dc.date.available	2014-12-08T15:29:06Z	-
dc.date.issued	2010	en_US
dc.identifier.isbn	978-1-56677-832-9	en_US
dc.identifier.issn	1938-5862	en_US
dc.identifier.uri	http://hdl.handle.net/11536/20996	-
dc.identifier.uri	http://dx.doi.org/10.1149/1.3485608	en_US
dc.description.abstract	The PSSs were fabricated by wet etching. Compared with the platform-PSS, the modified-PSS was still capped with a layer on the top platform after wet etching. The output power of the platform-PSS LED and modified-PSS are 27.3 mW and 29 mW, respectively, at an injection current of 20 mA. The output power of the modified-PSS LED is enhanced 6% compared with the platform-PSS. The results reveal that both electrical properties and optical properties of modified-PSS LED were improved.	en_US
dc.language.iso	en_US	en_US
dc.title	Enhancement Performance of GaN-based Light-emitting Diodes by Modified Patterned Sapphire Surface	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1149/1.3485608	en_US
dc.identifier.journal	STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS 52 (SOTAPOCS 52)	en_US
dc.citation.volume	33	en_US
dc.citation.issue	13	en_US
dc.citation.spage	67	en_US
dc.citation.epage	69	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000313569400006	-
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