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dc.contributor.authorCheng, Hui-Wenen_US
dc.contributor.authorYeh, Ta-Chingen_US
dc.contributor.authorKuo, Yi-Tingen_US
dc.contributor.authorLi, Yimingen_US
dc.contributor.authorLin, Chen-Chunen_US
dc.contributor.authorPan, Fu-Mingen_US
dc.contributor.authorChiang, Mei-Tsaoen_US
dc.contributor.authorLo, Kuo-Chungen_US
dc.contributor.authorMo, Chi-Nengen_US
dc.date.accessioned2014-12-08T15:01:05Z-
dc.date.available2014-12-08T15:01:05Z-
dc.date.issued2008en_US
dc.identifier.issn0097-966Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/20-
dc.description.abstractIn this work, process variation on the field emission property of the fabricated field emission (FE) triode arrays with carbon nanotubes (CNTs) as the field emitters are explored. To fabricate the FE triode structure, nanoporous anodic aluminum oxide (AAO) thin layer was first prepared on the Si substrate, followed by the growth of vertically aligned carbon nanotubes in AAO pore channels by electron cyclotron resonance chemical vapor deposition. The SiO2 dielectric and Al gate electrode layers required for the triode structure were directly deposited on the CNTs. Reactive ion and wet etches were then used to open the FE area in the triode. We employ the finite difference time domain particle-in-cell method to calculate the structure FE properly, where the results are calibrated with the collected FE current of the fabricated samples. The FE current Of Structure is then examined with respect to different shape, random height and angle of the CNT emitters. For symmetric shapes, like circle and square, the emission beam has been more focusing than triangle and trapezoid. The electric field of random height of CNTs is stronger than that of random angle. It is implied that the vertical CNTs has better FE property. Having the symmetric shape and vertical CNTs in triode Structure benefits the FE sources for advanced flat display technologies.en_US
dc.language.isoen_USen_US
dc.titleMorphology effect on field emission property of carbon nanotube emitters in triode structureen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2008 SID INTERNATIONAL SYMPOSIUM, DIGEST OF TECHNICAL PAPERS, VOL XXXIX, BOOKS I-IIIen_US
dc.citation.volume39en_US
dc.citation.spage66en_US
dc.citation.epage69en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000258530100017-
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