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dc.contributor.authorLiao, C. C.en_US
dc.contributor.authorKu, T. C.en_US
dc.contributor.authorLin, M. H.en_US
dc.contributor.authorZeng, Langen_US
dc.contributor.authorKang, Jinfengen_US
dc.contributor.authorLiu, Xiaoyanen_US
dc.contributor.authorChin, Alberten_US
dc.date.accessioned2014-12-08T15:29:10Z-
dc.date.available2014-12-08T15:29:10Z-
dc.date.issued2013-02-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2012.2230241en_US
dc.identifier.urihttp://hdl.handle.net/11536/21019-
dc.description.abstractHigh-performance TaN/TiLaO/La2O3/SiO2/(111)-Ge nMOSFETs show high mobility of 432 cm(2)/V . s at 10(13) cm(-2) carrier density (N-s), good 1.05 junction ideality factor, and small subthreshold swing of 101 mV/dec, at a small 1.1-nm capacitance-equivalent thickness (CET). This is the first report of higher mobility in the Ge nMOSFET than SiO2/Si universal mobility at wide medium-high N-s range and small CET of 1.1 nm, which is attributed to using the (111)-Ge substrate, 30-ns laser annealing, SiO2 interfacial layer, and YbGex/n-Ge contact.en_US
dc.language.isoen_USen_US
dc.subjectAnnealingen_US
dc.subjectGeen_US
dc.subjecthigh-kappaen_US
dc.subjectlaseren_US
dc.subjectYbGeen_US
dc.subject(111)en_US
dc.titleMetal-Gate/High-kappa/Ge nMOS at Small CET With Higher Mobility Than SiO2/Si at Wide Range Carrier Densitiesen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2012.2230241en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume34en_US
dc.citation.issue2en_US
dc.citation.spage163en_US
dc.citation.epage165en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000314173200005-
dc.citation.woscount1-
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