標題: EFFECT OF SIH4/CH4 FLOW RATIO ON THE GROWTH OF BETA-SIC ON SI BY ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION AT 500-DEGREES-C
作者: LIU, CC
LEE, CY
CHENG, KL
CHENG, HC
YEW, TR
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 9-Jan-1995
URI: http://dx.doi.org/10.1063/1.113552
http://hdl.handle.net/11536/2104
ISSN: 0003-6951
DOI: 10.1063/1.113552
期刊: APPLIED PHYSICS LETTERS
Volume: 66
Issue: 2
起始頁: 168
結束頁: 170
Appears in Collections:Articles