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dc.contributor.authorCheng, Bo-Siaoen_US
dc.contributor.authorWu, Tzeng-Tsongen_US
dc.contributor.authorLai, Ying-Youen_US
dc.contributor.authorWu, Yun-Linen_US
dc.contributor.authorChen, Cheng-Hungen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.date.accessioned2014-12-08T15:29:21Z-
dc.date.available2014-12-08T15:29:21Z-
dc.date.issued2012en_US
dc.identifier.isbn978-1-55752-933-6en_US
dc.identifier.urihttp://hdl.handle.net/11536/21132-
dc.description.abstractWe demonstrate a GaN-based microcavity light emitter (MCLE) with an AlN current blocking layer. An AlN layer is inserted on the InGaN/GaN multiple quantum wells as a current blocking layer and an optical confinement layer. (C)2011 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleCharacteristics of an Electrically Pumped GaN-based Microcavity Light Emitter with an AlN Current Blocking Layeren_US
dc.typeProceedings Paperen_US
dc.identifier.journal2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000310362401102-
Appears in Collections:Conferences Paper


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