Characteristics of an Electrically Pumped GaN-based Microcavity Light Emitter with an AlN Current Blocking Layer

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Cheng, Bo-Siao	en_US
dc.contributor.author	Wu, Tzeng-Tsong	en_US
dc.contributor.author	Lai, Ying-You	en_US
dc.contributor.author	Wu, Yun-Lin	en_US
dc.contributor.author	Chen, Cheng-Hung	en_US
dc.contributor.author	Lu, Tien-Chang	en_US
dc.contributor.author	Kuo, Hao-Chung	en_US
dc.contributor.author	Wang, Shing-Chung	en_US
dc.date.accessioned	2014-12-08T15:29:21Z	-
dc.date.available	2014-12-08T15:29:21Z	-
dc.date.issued	2012	en_US
dc.identifier.isbn	978-1-55752-933-6	en_US
dc.identifier.uri	http://hdl.handle.net/11536/21132	-
dc.description.abstract	We demonstrate a GaN-based microcavity light emitter (MCLE) with an AlN current blocking layer. An AlN layer is inserted on the InGaN/GaN multiple quantum wells as a current blocking layer and an optical confinement layer. (C)2011 Optical Society of America	en_US
dc.language.iso	en_US	en_US
dc.title	Characteristics of an Electrically Pumped GaN-based Microcavity Light Emitter with an AlN Current Blocking Layer	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000310362401102	-
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