Simulation of Grading Double Hetero-junction non-polar InGaN Solar cell

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Wang, Hsun-Wen	en_US
dc.contributor.author	Yu, Pei-Chen	en_US
dc.contributor.author	Han, Hau-Vei	en_US
dc.contributor.author	Lin, Chien-Chung	en_US
dc.contributor.author	Kuo, Hao-Chung	en_US
dc.contributor.author	Lin, Shiuan-Huei	en_US
dc.date.accessioned	2014-12-08T15:29:21Z	-
dc.date.available	2014-12-08T15:29:21Z	-
dc.date.issued	2012	en_US
dc.identifier.isbn	978-1-55752-933-6	en_US
dc.identifier.uri	http://hdl.handle.net/11536/21139	-
dc.description.abstract	The characteristics of non-polar double heterojunction GaN/InxGa1-xN solar cells with various indium contents are numerically investigated. By smoothing the interface band edge offset with graded junction, the maximum efficiency reached 24.32 % as In0.6Ga0.4N. (C) 2012 Optical Society of America	en_US
dc.language.iso	en_US	en_US
dc.title	Simulation of Grading Double Hetero-junction non-polar InGaN Solar cell	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000310362401459	-
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