標題: Simulation of Grading Double Hetero-junction non-polar InGaN Solar cell
作者: Wang, Hsun-Wen
Yu, Pei-Chen
Han, Hau-Vei
Lin, Chien-Chung
Kuo, Hao-Chung
Lin, Shiuan-Huei
光電工程學系
Department of Photonics
公開日期: 2013
摘要: In this study, the characteristics of non-polar double heterojunction GaN/ InxGa1-xN solar cells with various indium contents are numerically investigated under AM 1.5 global spectrum using finite element analysis. By smoothing the interface band edge offset with graded junction, we see the enhancement on short circuit current and power conversion efficiency. The maximum efficiency of the simulation results reached 24,32 % when the major absorption region contains 65% of indium composition..
URI: http://hdl.handle.net/11536/21971
ISBN: 978-1-4673-4841-6
ISSN: 2159-3523
期刊: PROCEEDINGS OF THE 2013 IEEE 5TH INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC)
起始頁: 143
結束頁: 145
顯示於類別:會議論文