Influence of structural anisotropy to anisotropic electron mobility in a-plane InN

Abstract

This study reports on the anisotropic electron transport properties and a correlation between the electron mobility (mu) and the stacking faults (SFs) in the a-plane InN film. Electron mobilities measured by terahertz time-domain spectroscopy and Hall effect measurement along the in-plane [(1) over bar 100] (c(perpendicular to)) orientation were much higher than those of the in-plane [0001] (c(parallel to)) orientation. This result shows a sharp contrast to higher defect density for the c(perpendicular to) orientation as measured by x-ray diffraction. The electrons transporting through the planar SFs aligned along the c(perpendicular to) direction are expected to experience more scattering by defects, resulting in lower mu for the c(parallel to) orientation. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4792209]