完整後設資料紀錄
DC 欄位 | 值 | 語言 |
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dc.contributor.author | Yu, Chia-Hui | en_US |
dc.contributor.author | Hsu, Heng-Tung | en_US |
dc.contributor.author | Chiang, Che-Yang | en_US |
dc.contributor.author | Kuo, Chien-I | en_US |
dc.contributor.author | Miyamoto, Yasuyuki | en_US |
dc.contributor.author | Chang, Edward Yi | en_US |
dc.date.accessioned | 2014-12-08T15:29:32Z | - |
dc.date.available | 2014-12-08T15:29:32Z | - |
dc.date.issued | 2013-02-01 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://dx.doi.org/10.7567/JJAP.52.020203 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/21237 | - |
dc.description.abstract | In this study, we present the fabrication and characterization of InGaSb/AlSb p-channel high-hole-mobility-transistor devices using inductively coupled plasma (ICP) etching with BCl3 gas. Devices fabricated by the dry etching technique show good DC and RF performances. Radio-frequency (RF) performance for devices with different source-to-drain spacing (L-SD) and gate length (L-g) were investigated. The fabricated 80-nm-gate-length p-channel device with 2-mu m LSD exhibited a maximum drain current of 86.2mA/mm with peak transconductance (g(m)) of 64.5mS/mm. The current gain cutoff frequency (f(T)) was measured to be 15.8 GHz when the device was biased at V-DS = -1.2 V and V-GS = 0.4 V. (C) 2013 The Japan Society of Applied Physics | en_US |
dc.language.iso | en_US | en_US |
dc.title | Performance Evaluation of InGaSb/AlSb P-Channel High-Hole-Mobility Transistor Faricated Using BCl3 Dry Etching | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.7567/JJAP.52.020203 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | en_US |
dc.citation.volume | 52 | en_US |
dc.citation.issue | 2 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000314466800003 | - |
dc.citation.woscount | 1 | - |
顯示於類別: | 期刊論文 |