標題: Characterization of AlInN Layer Grown on GaN/Sapphire Substrate by MOCVD
作者: Huang, Wei-Ching
Chang, Edward-Yi
Wong, Yuen-Yee
Lin, Kung-Liang
Hsiao, Yu-Lin
Dee, Chang Fu
Majlis, Burhanuddin Yeop
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: AlInN layer;GaN;MOCVD
公開日期: 1-二月-2013
摘要: The AlInN layers have been grown with different growth parameters on GaN/sapphire substrates by metal-organic chemical vapor deposition (MOCVD). The effects of growth parameters such as pressure and temperature on the Al incorporation during AlInN material growth have been investigated. The results showed that lower pressure provides a tendency for higher Al incorporating in the AlInN layer. Besides, as the temperature was increased from 700 degrees C to 780 degrees C, an estimation of 4% reduction on the indium composition has been observed for each 20 degrees C increment. XRD analysis showed that the best crystal quality of AlInN occured at 80% Al composition because of the higher lattice matching with GaN. Based on the above criteria, an Al0.8In0.2N/GaN HEMT device with 2 mu m gate length has also been fabricated. The DC characteristics showed a saturated current, I-dss of 280 mA/mm and transconductance of 140 mS/mm.
URI: http://hdl.handle.net/11536/21250
ISSN: 0126-6039
期刊: SAINS MALAYSIANA
Volume: 42
Issue: 2
起始頁: 247
結束頁: 250
顯示於類別:期刊論文