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dc.contributor.authorLai, Ying-Chihen_US
dc.contributor.authorWang, Di-Yanen_US
dc.contributor.authorHuang, I-Shengen_US
dc.contributor.authorChen, Yu-Tingen_US
dc.contributor.authorHsu, Yung-Hsuanen_US
dc.contributor.authorLin, Tai-Yuanen_US
dc.contributor.authorMeng, Hsin-Feien_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorYang, Ying-Jayen_US
dc.contributor.authorChen, Chia-Chunen_US
dc.contributor.authorHsu, Fang-Chien_US
dc.contributor.authorChen, Yang-Fangen_US
dc.date.accessioned2014-12-08T15:29:38Z-
dc.date.available2014-12-08T15:29:38Z-
dc.date.issued2013en_US
dc.identifier.issn2050-7526en_US
dc.identifier.urihttp://hdl.handle.net/11536/21286-
dc.identifier.urihttp://dx.doi.org/10.1039/c2tc00010een_US
dc.description.abstractThe trend towards simple and low-cost processing is one of the most important for macromolecular memory development. Here, bistable memory devices using a solution-processable active material, a mixture of graphene nanoflakes (GNFs) and insulating poly(vinyl alcohol) (PVA), are investigated, which serve as the first example for the direct integration of as-prepared nanoscale graphene into macromolecular memory devices through a one-step low-temperature processing method. Bistable electrical switching behavior and nonvolatile rewritable memory effects are realized by using an indium-tin-oxide/GNF-PVA/silver (ITO/GNF-PVA/Ag) sandwich structure. The resulting device exhibits low operation voltages of +1.4 V (turn-on) and -1.3 V (turn-off), which is promising for memory cells with low power consumptions. The programmable ON- and OFF-states possess a retention time of over 10(4) s and endure up to 10(7) read pulses. The carrier transport in the OFF- and ON-states follows the typical trap-limited space charge limited current and Ohmic laws, respectively. The asymmetric electrical switch behavior is therefore attributed to conducting filaments formed in the PVA layer assisted by the charged GNFs that induce the transition of the conductivity. Our study provides a potential approach for integrating as-prepared graphene into macromolecular memory devices with excellent performances through a simple solution-process.en_US
dc.language.isoen_USen_US
dc.titleLow operation voltage macromolecular composite memory assisted by graphene nanoflakesen_US
dc.typeArticleen_US
dc.identifier.doi10.1039/c2tc00010een_US
dc.identifier.journalJOURNAL OF MATERIALS CHEMISTRY Cen_US
dc.citation.volume1en_US
dc.citation.issue3en_US
dc.citation.spage552en_US
dc.citation.epage559en_US
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000314802200026-
dc.citation.woscount4-
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