Reducing Ni residues of Metal Induced Crystallization Poly-Si with a Simple Chemical Oxide Layer

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DC 欄位	值	語言
dc.contributor.author	Lai, Ming-Hui	en_US
dc.contributor.author	Wu, YewChung Sermon	en_US
dc.date.accessioned	2014-12-08T15:29:42Z	-
dc.date.available	2014-12-08T15:29:42Z	-
dc.date.issued	2010	en_US
dc.identifier.isbn	978-1-60768-174-8	en_US
dc.identifier.issn	1938-5862	en_US
dc.identifier.uri	http://hdl.handle.net/11536/21332	-
dc.identifier.uri	http://dx.doi.org/10.1149/1.3481230	en_US
dc.description.abstract	The high leakage current is the most important issue of MIC-TFT. Ni residues in the MIC-TFT is the major cause of the leakage. In this study, a chemical oxide layer was used to avoid excess of Ni atoms into a-Si layer during MIC process. The process is simple and without extra thermal annealing. It was found that the Ni concentration of poly-Si film with chemical oxide layer was much less than that of conventional MIC poly-Si film. As a result, the leakage current was improved.	en_US
dc.language.iso	en_US	en_US
dc.title	Reducing Ni residues of Metal Induced Crystallization Poly-Si with a Simple Chemical Oxide Layer	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1149/1.3481230	en_US
dc.identifier.journal	THIN FILM TRANSISTORS 10 (TFT 10)	en_US
dc.citation.volume	33	en_US
dc.citation.issue	5	en_US
dc.citation.spage	157	en_US
dc.citation.epage	159	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000315444100017	-
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