High Performance and Reliability of Poly-Si Thin-Film Transistors Using Nickel Drive-In Induced Laterally Crystallization

doi:10.1149/1.3481236

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DC 欄位	值	語言
dc.contributor.author	Wu, YewChung Sermon	en_US
dc.contributor.author	Chang, Chih-Pang	en_US
dc.date.accessioned	2014-12-08T15:29:43Z	-
dc.date.available	2014-12-08T15:29:43Z	-
dc.date.issued	2010	en_US
dc.identifier.isbn	978-1-60768-174-8	en_US
dc.identifier.issn	1938-5862	en_US
dc.identifier.uri	http://hdl.handle.net/11536/21336	-
dc.identifier.uri	http://dx.doi.org/10.1149/1.3481236	en_US
dc.description.abstract	In this study, polycrystalline silicon thin film transistors using drive-in Ni induced lateral crystallization (DILC) was proposed. In DILC, F+ implantation was used to drive Ni in the alpha-Si layer. To reduce the Ni contamination, the remained Ni film was then removed, and subsequently annealed at 590 degrees C. It was found DILC TFTs exhibit high field-effect mobility, low threshold voltage, low subthreshold slope, high on-state current, lower trap state density, smaller standard deviations, and low off-state leakage current compared with conventional Ni-metal-induced lateral crystallization (MILC) TFTs.	en_US
dc.language.iso	en_US	en_US
dc.title	High Performance and Reliability of Poly-Si Thin-Film Transistors Using Nickel Drive-In Induced Laterally Crystallization	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1149/1.3481236	en_US
dc.identifier.journal	THIN FILM TRANSISTORS 10 (TFT 10)	en_US
dc.citation.volume	33	en_US
dc.citation.issue	5	en_US
dc.citation.spage	193	en_US
dc.citation.epage	195	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000315444100023	-
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