完整後設資料紀錄
DC 欄位 | 值 | 語言 |
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dc.contributor.author | Yang, Yao-Yi | en_US |
dc.contributor.author | Wang, Shih-Wei | en_US |
dc.contributor.author | Hsieh, Chun-Yu | en_US |
dc.contributor.author | Huang, Tzu-Chi | en_US |
dc.contributor.author | Lee, Yu-Huei | en_US |
dc.contributor.author | Chen, Ke-Horng | en_US |
dc.date.accessioned | 2014-12-08T15:29:43Z | - |
dc.date.available | 2014-12-08T15:29:43Z | - |
dc.date.issued | 2013-07-01 | en_US |
dc.identifier.issn | 0278-0046 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/TIE.2012.2196904 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/21340 | - |
dc.description.abstract | Avalanche photodiodes (APDs) accompanied with the transimpedance amplifiers (TIAs) are often utilized as receivers in the communication system. A drawback of APDs is that the avalanche gain depends on temperature and varies with the bias voltage, leading to a decrease in the quality of communication. Moreover, the bias voltage for a high avalanche gain is up to 80 V, implying that a power module is inevitably required and raises the difficulty of integration. Therefore, a power management is proposed to provide an 80-V voltage and compensates the temperature dependence for a constant avalanche gain. The low-ripple high-conversion-ratio boost converter eliminates the LC resonance resulted from the nonideal effect of diodes to supress the output voltage ripple, implying that a high quality of bias voltage is guaranteed. Experimental results show that the output voltage ripple is 2.12 mV under the condition of 1-mA load current. A 97% accuracy of avalanche gain is proved to guarantee the high quality of APDs. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Avalanche photodiodes (APDs) | en_US |
dc.subject | high-conversation-ratio boost converter | en_US |
dc.subject | high reverse-biasing voltage | en_US |
dc.subject | output voltage ripple | en_US |
dc.title | Power Management With a Low-Ripple High-Conversion-Ratio 80-V Output Voltage Boost Converter for Avalanche Photodiode System | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/TIE.2012.2196904 | en_US |
dc.identifier.journal | IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS | en_US |
dc.citation.volume | 60 | en_US |
dc.citation.issue | 7 | en_US |
dc.citation.spage | 2627 | en_US |
dc.citation.epage | 2637 | en_US |
dc.contributor.department | 電機工程學系 | zh_TW |
dc.contributor.department | 電控工程研究所 | zh_TW |
dc.contributor.department | Department of Electrical and Computer Engineering | en_US |
dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
dc.identifier.wosnumber | WOS:000316208000011 | - |
dc.citation.woscount | 0 | - |
顯示於類別: | 期刊論文 |