标题: | Dislocation reduction in GaN film using Ga-lean GaN buffer layer and migration enhanced epitaxy |
作者: | Wong, Yuen-Yee Chang, Edward Yi Wu, Yue-Han Hudait, Mantu K. Yang, Tsung-Hsi Chang, Jet-Rung Ku, Jui-Tai Chou, Wu-Ching Chen, Chiang-Yao Maa, Jer-Shen Lin, Yueh-Chin 材料科学与工程学系 光电学院 电子工程学系及电子研究所 Department of Materials Science and Engineering College of Photonics Department of Electronics Engineering and Institute of Electronics |
关键字: | Molecular beam epitaxy;Gallium nitride;Dislocations;Ga-lean gallium nitride;Migration enhanced epitaxy;Atomic force microscopy;High-resolution X-ray diffraction;Transmission electron microscopy |
公开日期: | 29-七月-2011 |
摘要: | A GaN buffer layer grown under Ga-lean conditions by plasma-assisted molecular beam epitaxy (PAMBE) was used to reduce the dislocation density in a GaN film grown on a sapphire substrate. The Ga-lean buffer, with inclined trench walls on its surface, provided an effective way to bend the propagation direction of dislocations, and it reduced the dislocation density through recombination and annihilation processes. As a result, the edge dislocation density in the GaN film was reduced by approximately two orders of magnitude to 2 x 10(8) cm(-2). The rough surface of the Ga-lean buffer was recovered using migration enhanced epitaxy (MEE), a process of alternating deposition cycle of Ga atoms and N(2) radicals, during the PAMBE growth. By combining these two methods, a GaN film with high-crystalline-quality and atomically-flat surface can be achieved by PAMBE on a lattice mismatch substrate. (C) 2011 Elsevier B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.tsf.2011.03.054 http://hdl.handle.net/11536/21360 |
ISSN: | 0040-6090 |
DOI: | 10.1016/j.tsf.2011.03.054 |
期刊: | THIN SOLID FILMS |
Volume: | 519 |
Issue: | 19 |
起始页: | 6208 |
结束页: | 6213 |
显示于类别: | Articles |
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