標題: | High Q microcavity light emitting diodes with buried AlN current apertures |
作者: | Cheng, Bo-Siao Wu, Yun-Lin Lu, Tien-Chang Chiu, Ching-Hsueh Chen, Cheng-Hung Tu, Po-Min Kuo, Hao-Chung Wang, Shing-Chung Chang, Chun-Yen 光電工程學系 Department of Photonics |
公開日期: | 25-七月-2011 |
摘要: | We demonstrate a GaN-based high-Q microcavity light emitting diode (MCLED) with a buried AlN current aperture. A thin AlN layer is inserted on the InGaN/GaN multiple quantum wells as a current blocking layer and an optical confinement layer. The GaN-based MCLED is composed of a 29-pair GaN/AlN distributed Bragg reflector (DBR), an eight-pair of SiO(2)/Ta(2)O(5) dielectric DBR, and a three-lambda optical thickness InGaN/GaN active region. The current can be injected more effectively in the MCLED with a buried AlN current aperture. The output emission has a dominant emission peak wavelength at 440 nm with a very narrow linewidth of 0.52 nm, corresponding to a cavity Q-value of 846 at a driving current of 5 mA. (C) 2011 American Institute of Physics. [doi:10.1063/1.3617418] |
URI: | http://dx.doi.org/10.1063/1.3617418 http://hdl.handle.net/11536/21405 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.3617418 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 99 |
Issue: | 4 |
結束頁: | |
顯示於類別: | 期刊論文 |