標題: | Design of Dual-Band ESD Protection for 24-/60-GHz Millimeter-Wave Circuits |
作者: | Chu, Li-Wei Lin, Chun-Yu Ker, Ming-Dou 電子工程學系及電子研究所 光電工程學系 顯示科技研究所 Department of Electronics Engineering and Institute of Electronics Department of Photonics Institute of Display |
關鍵字: | CMOS;dual-band;electrostatic discharge (ESD) protection;millimeter-wave (MMW);radio frequency (RF) |
公開日期: | 1-Mar-2013 |
摘要: | To effectively protect the millimeter-wave (MMW) circuits in nanoscale CMOS technology from electrostatic discharge (ESD) damages, a dual-band ESD protection cell for 24-/60-GHz ESD protection is presented in this paper. The proposed ESD protection cell consisted of a diode, a silicon-controlled rectifier, a PMOS, and two inductors. To verify the dual-band characteristics and ESD robustness, the proposed ESD protection circuit had been applied to a 24-/60-GHz low-noise amplifier (LNA). The measurement results showed over-2-kV human-body-model ESD robustness with little performance degradation on LNA. The proposed dual-band ESD protection cell was suitable for circuit designers for them to easily apply ESD protection in the dual-band MMW circuits. |
URI: | http://dx.doi.org/10.1109/TDMR.2012.2217498 http://hdl.handle.net/11536/21409 |
ISSN: | 1530-4388 |
DOI: | 10.1109/TDMR.2012.2217498 |
期刊: | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY |
Volume: | 13 |
Issue: | 1 |
起始頁: | 110 |
結束頁: | 118 |
Appears in Collections: | Articles |
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