Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Le Hur, Karyn | en_US |
dc.contributor.author | Chung, Chung-Hou | en_US |
dc.contributor.author | Paul, I. | en_US |
dc.date.accessioned | 2019-04-03T06:36:06Z | - |
dc.date.available | 2019-04-03T06:36:06Z | - |
dc.date.issued | 2011-07-22 | en_US |
dc.identifier.issn | 1098-0121 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1103/PhysRevB.84.024526 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/21448 | - |
dc.description.abstract | We propose to increase the superconducting transition temperature T-c of strongly correlated materials by designing heterostructures which exhibit a high pairing energy as a result of magnetic fluctuations. More precisely, applying an effective theory of the doped Mott insulator, we envisage a bilayer Hubbard system where both layers exhibit intrinsic intralayer (intraband) d-wave superconducting correlations. Introducing a finite asymmetry between the hole densities of the two layers such that one layer becomes slightly more underdoped and the other more overdoped, we show a visible enhancement of T-c compared to the optimally doped isolated layer. Using the bonding and antibonding band basis, we show that the mechanism behind this enhancement of T-c is the interband pairing correlation mediated by the hole asymmetry which strives to decrease the paramagnetic nodal contribution to the superfluid stiffness. For two identical layers, T-c remains comparable to that of the isolated layer until moderate values of the interlayer single-particle tunneling term. These heterostructures shed new light on fundamental questions related to superconductivity. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Designing heterostructures with higher-temperature superconductivity | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1103/PhysRevB.84.024526 | en_US |
dc.identifier.journal | PHYSICAL REVIEW B | en_US |
dc.citation.volume | 84 | en_US |
dc.citation.issue | 2 | en_US |
dc.citation.spage | 0 | en_US |
dc.citation.epage | 0 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000293005500003 | en_US |
dc.citation.woscount | 4 | en_US |
Appears in Collections: | Articles |
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