標題: | Investigating bipolar resistive switching characteristics in filament type and interface type BON-based resistive switching memory |
作者: | Tseng, Hsueh-Chih Chang, Ting-Chang Cheng, Kai-Hung Huang, Jheng-Jie Chen, Yu-Ting Jian, Fu-Yen Sze, Simon M. Tsai, Ming-Jinn Chu, Ann-Kuo Wang, Ying-Lang 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | ReRAM;BON;BON:Gd;Interface type;NDR |
公開日期: | 1-二月-2013 |
摘要: | This paper studies the effect of doping on BON-based resistive switching characteristics. Typical bipolar resistive switching behavior can be observed in Pt/BON/TiN and Pt/BON:Gd/TiN devices. The conductive path(s) of the Pt/BON/TiN is vacancy-dominated while the Pt/BON:Gd/TiN is metal-dominated. Additionally, there is an atypical bipolar resistive switching in the Gd-doping device. This atypical characteristic has not only a size effect, but also a lower operating current. The resistance transitions are due to the variation in conductance of the switching layer, which is clearly influenced by the different area size. A mechanism is proposed to explain this atypical characteristic. (c) 2012 Elsevier B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.tsf.2012.09.031 http://hdl.handle.net/11536/21455 |
ISSN: | 0040-6090 |
DOI: | 10.1016/j.tsf.2012.09.031 |
期刊: | THIN SOLID FILMS |
Volume: | 529 |
Issue: | |
起始頁: | 389 |
結束頁: | 393 |
顯示於類別: | 期刊論文 |