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dc.contributor.authorTseng, Hsueh-Chihen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorCheng, Kai-Hungen_US
dc.contributor.authorHuang, Jheng-Jieen_US
dc.contributor.authorChen, Yu-Tingen_US
dc.contributor.authorJian, Fu-Yenen_US
dc.contributor.authorSze, Simon M.en_US
dc.contributor.authorTsai, Ming-Jinnen_US
dc.contributor.authorChu, Ann-Kuoen_US
dc.contributor.authorWang, Ying-Langen_US
dc.date.accessioned2014-12-08T15:29:55Z-
dc.date.available2014-12-08T15:29:55Z-
dc.date.issued2013-02-01en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2012.09.031en_US
dc.identifier.urihttp://hdl.handle.net/11536/21455-
dc.description.abstractThis paper studies the effect of doping on BON-based resistive switching characteristics. Typical bipolar resistive switching behavior can be observed in Pt/BON/TiN and Pt/BON:Gd/TiN devices. The conductive path(s) of the Pt/BON/TiN is vacancy-dominated while the Pt/BON:Gd/TiN is metal-dominated. Additionally, there is an atypical bipolar resistive switching in the Gd-doping device. This atypical characteristic has not only a size effect, but also a lower operating current. The resistance transitions are due to the variation in conductance of the switching layer, which is clearly influenced by the different area size. A mechanism is proposed to explain this atypical characteristic. (c) 2012 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectReRAMen_US
dc.subjectBONen_US
dc.subjectBON:Gden_US
dc.subjectInterface typeen_US
dc.subjectNDRen_US
dc.titleInvestigating bipolar resistive switching characteristics in filament type and interface type BON-based resistive switching memoryen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.tsf.2012.09.031en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume529en_US
dc.citation.issueen_US
dc.citation.spage389en_US
dc.citation.epage393en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000315928000084-
dc.citation.woscount0-
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