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dc.contributor.authorWang, Chao-Lungen_US
dc.contributor.authorLee, I-Cheen_US
dc.contributor.authorWu, Chun-Yuen_US
dc.contributor.authorCheng, Yu-Tingen_US
dc.contributor.authorYang, Po-Yuen_US
dc.contributor.authorCheng, Huang-Chungen_US
dc.date.accessioned2014-12-08T15:29:55Z-
dc.date.available2014-12-08T15:29:55Z-
dc.date.issued2013-02-01en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2012.09.048en_US
dc.identifier.urihttp://hdl.handle.net/11536/21456-
dc.description.abstractHigh-performance polycrystalline silicon thin-film transistors (TFTs) using an excimer laser crystallization of the prepatterned channel layer on the bottom-gate (BG) structure were fabricated to exhibit a field-effect mobility as high as 339 cm(2)/V s and an on/off current ratio of 9.5x10(7) with respect to 102 cm(2)/V s and 1.5x10(7) for the conventional top-gate (TG) TFTs, respectively. Such a superior performance is attributed to the cross-shaped grain boundary structure formed in the channel region owing to the two-dimensional location control of grain boundaries. Moreover, the prepatterned BG TFTs show better device-to-device uniformity than the conventional TG ones due to the manipulated grain boundaries. This technology is thus promising for the future applications of system-on-panel and three-dimension integrated circuits. (C) 2012 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectExcimer laser crystallization (ELC)en_US
dc.subjectPolycrystalline siliconen_US
dc.subjectPrepatterneden_US
dc.subjectThin-film transistors (TFTs)en_US
dc.titleHigh-performance polycrystalline silicon thin-film transistors prepared via the laser crystallization of the prepatterned channel layer on the bottom-gate structureen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.tsf.2012.09.048en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume529en_US
dc.citation.issueen_US
dc.citation.spage421en_US
dc.citation.epage425en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000315928000091-
dc.citation.woscount0-
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