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dc.contributor.authorKuo, C. C.en_US
dc.contributor.authorLiu, W. -R.en_US
dc.contributor.authorLin, B. H.en_US
dc.contributor.authorHsieh, W. F.en_US
dc.contributor.authorHsu, C. -H.en_US
dc.contributor.authorLee, W. C.en_US
dc.contributor.authorHong, M.en_US
dc.contributor.authorKwo, J.en_US
dc.date.accessioned2014-12-08T15:29:55Z-
dc.date.available2014-12-08T15:29:55Z-
dc.date.issued2013-01-28en_US
dc.identifier.issn1094-4087en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OE.21.001857en_US
dc.identifier.urihttp://hdl.handle.net/11536/21461-
dc.description.abstractTwo different types of lasing modes, vertical Fabry-Perot cavity and random lasing, were observed in ZnO epi-films of different thicknesses grown on Si (111) substrates. Under optical excitation at room temperature by a frequency tripled Nd:YVO4 laser with wavelength of 355 nm, the lasing thresholds are low due to high crystalline quality of the ZnO epitaxial films, which act as microresonators. For the thick ZnO layer (1,200 nm), its lasing action is originated from the random scattering due to the high density of crack networks developed in the thick ZnO film. However, the low crack density of the thin film (555 nm) fails to provide feedback loops essential for random scattering. Nevertheless, even the lower threshold lasing is achieved by the Fabry-Perot cavity formed by two interfaces of the thin ZnO film. The associated lasing modes of the thin ZnO film can be characterized as the transverse Gaussian modes attributed to the smooth curved surfaces. (C) 2013 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleVertical-cavity and randomly scattered lasing from different thicknesses of epitaxial ZnO films grown on Y2O3-buffered Si (111)en_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OE.21.001857en_US
dc.identifier.journalOPTICS EXPRESSen_US
dc.citation.volume21en_US
dc.citation.issue2en_US
dc.citation.spage1857en_US
dc.citation.epage1864en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000315989500053-
dc.citation.woscount1-
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