FOWLER-NORDHEIM LIMITED BAND-TO-BAND TUNNELING (FNBB) FOR P-MOSFET GATE CURRENT IN A FLOATING BULK CONDITION

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DC 欄位	值	語言
dc.contributor.author	CHAO, KC	en_US
dc.contributor.author	CHEN, MJ	en_US
dc.date.accessioned	2014-12-08T15:03:37Z	-
dc.date.available	2014-12-08T15:03:37Z	-
dc.date.issued	1995-01-01	en_US
dc.identifier.issn	0038-1101	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/0038-1101(94)E0049-K	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2151	-
dc.description.abstract	A new mechanism of Fowler-Nordheim tunneling limited band-to-band tunneling (FNBB) has been identified to be responsible for the gate current measured from p-MOSFETs with the bulk (n-well) floated. This mechanism has been found to occur in the gate-to-drain overlap region. Two-dimensional device simulations have successfully reproduced this gate current and thus the physical parameter values of the band-to-band tunneling model have been obtained.	en_US
dc.language.iso	en_US	en_US
dc.title	FOWLER-NORDHEIM LIMITED BAND-TO-BAND TUNNELING (FNBB) FOR P-MOSFET GATE CURRENT IN A FLOATING BULK CONDITION	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/0038-1101(94)E0049-K	en_US
dc.identifier.journal	SOLID-STATE ELECTRONICS	en_US
dc.citation.volume	38	en_US
dc.citation.issue	1	en_US
dc.citation.spage	135	en_US
dc.citation.epage	137	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1995QC42000019	-
dc.citation.woscount	1	-
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