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dc.contributor.authorLin, C. K.en_US
dc.contributor.authorChen, Chihen_US
dc.contributor.authorYu, H. M.en_US
dc.contributor.authorLan, J. K.en_US
dc.contributor.authorLee, D. L.en_US
dc.date.accessioned2014-12-08T15:03:37Z-
dc.date.available2014-12-08T15:03:37Z-
dc.date.issued2008en_US
dc.identifier.isbn978-1-4244-3619-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/2152-
dc.identifier.urihttp://dx.doi.org/10.1109/EMAP.2008.4784278en_US
dc.description.abstractThis study investigates electromigration Study of eutectic SnPb flip-chip solder joints on ceramic substrates. The under bump metallization (UBM) structure consist,; of 5-mu m Cu / 3-mu m Ni under bump metallization (UBM). Under the current stressing by 0.9A tit 150 degrees C, we did not find void formation but a large amount of intermetallic compound (IMC) of Cu(6)(Sn, Ni)(5) were fornied when the bump resistance increased 10 m Omega. Three-dimensional electrical Simulation by finite element analysis was carried out to simulate the current density distribution in solder joints with slit Cu traces. It is found that the current density was almost uniformly distributed in solder joint for this structure. It is found that the bump resistance only increases 0.07m Omega when half of the solder bump was transformed into Cu(6)Sn(5) IMC. The reason for the low crowding effect in the solder joints will be discussed in the conference.en_US
dc.language.isoen_USen_US
dc.titleElectromigration study of eutectic SnPb flip-chip solder joints on ceramic substratesen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1109/EMAP.2008.4784278en_US
dc.identifier.journal2008 EMAP CONFERENCE PROCEEDINGSen_US
dc.citation.spage259en_US
dc.citation.epage261en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000264237400060-
Appears in Collections:Conferences Paper


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