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dc.contributor.authorShen, Chang-Hongen_US
dc.contributor.authorShieh, Jia-Minen_US
dc.contributor.authorHuang, Jung Y.en_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorHsu, Chih-Weien_US
dc.contributor.authorDai, Bau-Tongen_US
dc.contributor.authorLee, Ching-Tingen_US
dc.contributor.authorPan, Ci-Lingen_US
dc.contributor.authorYang, Fu-Liangen_US
dc.date.accessioned2014-12-08T15:30:05Z-
dc.date.available2014-12-08T15:30:05Z-
dc.date.issued2011-07-18en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3615650en_US
dc.identifier.urihttp://hdl.handle.net/11536/21548-
dc.description.abstractWe investigate the performance of a single-junction amorphous Si (a-Si) solar cell fabricated with inductively coupled plasma (ICP) deposition technique. The high-density plasma resulting from high dissociation capacity of ICP enables good-quality hydrogenated Si films to be synthesized at low temperatures. High-density ICP also promotes the diffusion of reactive radicals on substrates and forms a-Si:H films with low defect density (similar to 3 x 10(15) cm(-3)). We demonstrate single-junction a-Si solar cells with a conversion efficiency of 9.6% and improved light-soaking stability. This low thermal-budget thin-film technique could open up the feasibility of efficient thin film solar cells on flexible substrates. (C) 2011 American Institute of Physics. [doi:10.1063/1.3615650]en_US
dc.language.isoen_USen_US
dc.titleInductively coupled plasma grown semiconductor films for low cost solar cells with improved light-soaking stabilityen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3615650en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume99en_US
dc.citation.issue3en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000293679000074-
dc.citation.woscount7-
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