标题: | Structural and optoelectronic properties of GZO/SiOx bilayer films by atmosphere pressure plasma jet |
作者: | Chang, Kow-Ming Ho, Po-Ching Wu, Chi-Wei Wu, Chin-Jyi Chang, Chia-Chiang 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
公开日期: | 2012 |
摘要: | Using simple technique to obtain high haze and high conductivity TCO films to enhance optical absorption for silicon thin film solar cell is important. The bilayer GZO film of high haze and low resistivity is achieved by atmosphere pressure plasma jet (APPJ). Thickness of bilayer GZO film was thinner than Asahi-U type FTO film and this result indicated that the APPJ deposition technique has lower material comsumption. The minimum resistivity of 6.00x10(-4) was achieved at 8 at% gallium doping. Xray diffraction spectrum showed that an increase in scanning times led to an increase in crystallinity of bilayer GZO films. The bilayer GZO film has much higher haze value in the visible and NIR regions as compared to Asahi U-type FTO film. |
URI: | http://hdl.handle.net/11536/21602 http://dx.doi.org/10.1149/1.3701542 |
ISBN: | 978-1-60768-317-9 |
ISSN: | 1938-5862 |
DOI: | 10.1149/1.3701542 |
期刊: | WIDE-BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 13 |
Volume: | 45 |
Issue: | 7 |
起始页: | 221 |
结束页: | 229 |
显示于类别: | Conferences Paper |
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