完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, Hsiao-Yun | en_US |
dc.contributor.author | Chen, Chih | en_US |
dc.date.accessioned | 2014-12-08T15:03:38Z | - |
dc.date.available | 2014-12-08T15:03:38Z | - |
dc.date.issued | 2008 | en_US |
dc.identifier.isbn | 978-1-4244-3619-4 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/2163 | - |
dc.identifier.uri | http://dx.doi.org/10.1109/EMAP.2008.4784279 | en_US |
dc.description.abstract | It is well known that Ni and its alloys possess a lower reaction rate with Sn than Cu and Cu alloys. Therefore Ni-based under bump metallization have attracted attention in recent years. In this study, the diffusion-control led reaction between eutectic Sn-3.5Ag flip chip solder joints between electroplated-Ni (EP-Ni) and electroless-Ni (EL-Ni) has been investigated. Morphology and growth kinetics of the formed Ni(3)Sn(4) are study under different reflow temperatures, durations and times. The growth rates and the formation activation energy of Ni(3)Sn(4) IMC were estimated with EP-Ni and EL-Ni, respectively. The obtained data showed that the Ni(3)Sn(4) in the Sn-3.5Ag filp chip solder grow much faster with EP-Ni than EL-Ni UBM under the same condition. In summary, we can conclude that the slow reaction rate of EP-Ni provided a well-attached contact at the interface after 20 minutes reflow process and is better compare with EL-Ni UBM at the substrate. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Kinetic study of eutectic Sn-3.5Ag and Electroplated Ni metallization in flip-chip solder joints | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.doi | 10.1109/EMAP.2008.4784279 | en_US |
dc.identifier.journal | 2008 EMAP CONFERENCE PROCEEDINGS | en_US |
dc.citation.spage | 262 | en_US |
dc.citation.epage | 267 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000264237400061 | - |
顯示於類別: | 會議論文 |