Semipolar (11(2)over-bar(2)over-bar) ZnO thin films grown on LaAlO3-buffered LSAT (112) single crystals by pulsed laser deposition

Abstract

Semipolar (11 (2) over bar(2) over bar) ZnO was successfully grown on (112) LaAlO3/(LaAlO3)(0.29)(Sr2AlTaO6)(0.35) substrate by pulsed laser deposition. The epitaxial relationship is [11 (2) over bar3](ZnO)// [11 (1) over bar](LAO/LSAT) with the polar axis of [000 (1) over bar](ZnO) pointing to the surface. For ZnO films with thickness of 1.6 mu m, the threading dislocation density is similar to 1 x 10(9) cm(-2), and the density of basal stacking faults is below 1 x 10(4) cm(-1). The (11 (2) over bar(2) over bar) ZnO exhibits strong (DX)-X-0 emissions with a FWHM of 9 meV and very few green-yellow emissions in the low-temperature (10 K) and room-temperature photoluminescence spectra, respectively. The XRD 2 theta-theta pattern of 1.6 mu m ZnO films grown on (112) LaAlO3/LSAT only reveals a sharp (11 (2) over bar(2) over bar) ZnO reflection for ZnO. The inset figure is the XRD rocking curve of (11 (2) over bar(2) over bar) ZnO with a FWHM of 0.084 degrees. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim