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dc.contributor.authorChou, K. I.en_US
dc.contributor.authorCheng, C. H.en_US
dc.contributor.authorZheng, Z. W.en_US
dc.contributor.authorLiu, Mingen_US
dc.contributor.authorChin, Alberten_US
dc.date.accessioned2014-12-08T15:30:22Z-
dc.date.available2014-12-08T15:30:22Z-
dc.date.issued2013-04-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2013.2243814en_US
dc.identifier.urihttp://hdl.handle.net/11536/21713-
dc.description.abstractExcellent device-to-device distribution was achieved in high-performance Ni/GeOx/TiOy/TaN resistive random access memory on low-cost flexible plastics, with low 30-mu W switching power (9 mu A at 3 V; -1 mu A at -3 V), 10(5) cycling endurance, and good retention at 85 degrees C. These were ascribed to bulk transport property by tunneling between traps, forming-free resistive switching, and the less destructive low power switching.en_US
dc.language.isoen_USen_US
dc.subjectFlexible electronicsen_US
dc.subjectGeOxen_US
dc.subjectresistive random access memory (RRAM)en_US
dc.subjectTiOyen_US
dc.titleNi/GeOx/TiOy/TaN RRAM on Flexible Substrate With Excellent Resistance Distributionen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2013.2243814en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume34en_US
dc.citation.issue4en_US
dc.citation.spage505en_US
dc.citation.epage507en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000316813100010-
dc.citation.woscount11-
Appears in Collections:Articles


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