Ni/GeOx/TiOy/TaN RRAM on Flexible Substrate With Excellent Resistance Distribution

doi:10.1109/LED.2013.2243814

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chou, K. I.	en_US
dc.contributor.author	Cheng, C. H.	en_US
dc.contributor.author	Zheng, Z. W.	en_US
dc.contributor.author	Liu, Ming	en_US
dc.contributor.author	Chin, Albert	en_US
dc.date.accessioned	2014-12-08T15:30:22Z	-
dc.date.available	2014-12-08T15:30:22Z	-
dc.date.issued	2013-04-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LED.2013.2243814	en_US
dc.identifier.uri	http://hdl.handle.net/11536/21713	-
dc.description.abstract	Excellent device-to-device distribution was achieved in high-performance Ni/GeOx/TiOy/TaN resistive random access memory on low-cost flexible plastics, with low 30-mu W switching power (9 mu A at 3 V; -1 mu A at -3 V), 10(5) cycling endurance, and good retention at 85 degrees C. These were ascribed to bulk transport property by tunneling between traps, forming-free resistive switching, and the less destructive low power switching.	en_US
dc.language.iso	en_US	en_US
dc.subject	Flexible electronics	en_US
dc.subject	GeOx	en_US
dc.subject	resistive random access memory (RRAM)	en_US
dc.subject	TiOy	en_US
dc.title	Ni/GeOx/TiOy/TaN RRAM on Flexible Substrate With Excellent Resistance Distribution	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LED.2013.2243814	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	34	en_US
dc.citation.issue	4	en_US
dc.citation.spage	505	en_US
dc.citation.epage	507	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000316813100010	-
dc.citation.woscount	11	-
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