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dc.contributor.authorChang, Kuan-Changen_US
dc.contributor.authorTsai, Tsung-Mingen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorWu, Hsing-Huaen_US
dc.contributor.authorChen, Kai-Huangen_US
dc.contributor.authorChen, Jung-Huien_US
dc.contributor.authorYoung, Tai-Faen_US
dc.contributor.authorChu, Tian-Jianen_US
dc.contributor.authorChen, Jian-Yuen_US
dc.contributor.authorPan, Chih-Hungen_US
dc.contributor.authorSu, Yu-Tingen_US
dc.contributor.authorSyu, Yong-Enen_US
dc.contributor.authorTung, Cheng-Weien_US
dc.contributor.authorChang, Geng-Weien_US
dc.contributor.authorChen, Min-Chenen_US
dc.contributor.authorHuang, Hui-Chunen_US
dc.contributor.authorTai, Ya-Hsiangen_US
dc.contributor.authorGan, Der-Shinen_US
dc.contributor.authorWu, Jia-Jieen_US
dc.contributor.authorHu, Yingen_US
dc.contributor.authorSze, Simon M.en_US
dc.date.accessioned2014-12-08T15:30:22Z-
dc.date.available2014-12-08T15:30:22Z-
dc.date.issued2013-04-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2013.2248075en_US
dc.identifier.urihttp://hdl.handle.net/11536/21715-
dc.description.abstractTo improve the resistive switching properties of the resistive random access memory (RRAM), the supercritical carbon dioxide (SCCO2) fluid is used as a low temperature treatment. In this letter, the Zn:SiOx thin films are treated by SCCO2 fluid mixed with pure water. After SCCO2 fluid treatment, the resistive switching qualities of the Zn:SiOx thin films are carried out by XPS, fourier transform infrared spectroscopy, and IV measurement. We believe that the SCCO2-treated Zn:SiOx thin film is a promising material for RRAM applications due to its compatibility with portable flat panel display.en_US
dc.language.isoen_USen_US
dc.subjectNonvolatile memoryen_US
dc.subjectresistive switchingen_US
dc.subjectsilicon oxideen_US
dc.subjectzincen_US
dc.titleLow Temperature Improvement Method on Zn:SiOx Resistive Random Access Memory Devicesen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2013.2248075en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume34en_US
dc.citation.issue4en_US
dc.citation.spage511en_US
dc.citation.epage513en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000316813100012-
dc.citation.woscount12-
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